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Consumer MemoryProduct GuideSAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

SPECIFICATIONS WITHOUT ts and specifications discussed herein are for reference purposes only. All information discussed

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Product Guide1. CONSUMER MEMORY ORDERING INFORMATIONJan. 2011Consumer Memory1 2 3 4 5 6 7 8 9 10 11

K 4 X X X X X X X X - X X X XSAMSUNG MemoryDRAMProductDensity & RefreshOrganization1. SAMSUNG Memory : K2. DRAM : 43. ProductS:SDRAMH:DDR SDRAMT:DDR2 SDRAMB:DDR3 SDRAM4. Density & Refresh64:64Mb, 4K/64ms28:128Mb, 4K/64ms56:256Mb, 8K/64ms51:512Mb, 8K/64ms1G:1Gb, 8K/64ms2G:2Gb, 8K/64ms5. Organization

04:x408:x816:x1632:x3231:x32 (2CS)6. Bank2:2 Banks3:4 Banks4:8 Banks

SpeedTemperature & PowerPackage TypeRevisionInterface (VDD, VDDQ)Bank7. Interface ( VDD, VDDQ)

2:LVTTL (3.3V, 3.3V)8:SSTL_2 (2.5V, 2.5V)Q:SSTL_18 (1.8V, 1.8V)6:SSTL_15 (1.5V, 1.5V)8. RevisionM:1st Gen.H:9th Gen.A:2nd Gen.I:10th Gen.B:3rd Gen.J:11th Gen.C:4th Gen.K:12th Gen.D:5th Gen.L:13th Gen.E:6th Gen.N:14th Gen.F:7th Gen.O:15th Gen.G:8th Gen.S:19th Gen.9. Package TypeU:TSOPII (Lead-free)100TQFP(Lead-free) only for 128Mb GDDRZ:FBGA (Lead-free)V:144FBGA (Lead-free) only for 128Mb GDDRL:TSOPII (Lead-free & Halogen-free)H:FBGA (Lead-free & Halogen-free)F:FBGA(Lead-free & Halogen-free) for 64Mb DDR, 128Mb GDDRM:FBGA DDP (Lead-free & Halogen-free)B:FBGA FLIP-CHIP (Lead-free & Halogen-free)10. Temperature & Power

C:Commercial Temp. & Normal PowerL:Commercial Temp. & Low PowerI:Industrial Temp. & Normal PowerP:Industrial Temp. & Low PowerD:Industrial Temp. & Super Low Power- 2 -

Product GuideJan. 2011Consumer Memory1 2 3 4 5 6 7 8 9 10 11

K 4 X X X X X X X X - X X X XSAMSUNG MemoryDRAMProductDensity & RefreshOrganizationSpeedTemperature & PowerPackage TypeRevisionInterface (VDD, VDDQ)Bank11. Speed

75:7.5ns, PC133 (133MHz CL=3)60:6.0ns (166MHz CL=3)50:5.0ns (200MHz CL=3)40:4.0ns (250MHz CL=3)B0:DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3)B3:DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3)CC:DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)E6:DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5)E7:DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5)F7:DDR2/3-800 (400MHz @ CL=6, tRCD=6, tRP=6)F8:DDR2/3-1066 (533MHz @ CL=7, tRCD=7, tRP=7)H9:DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9)K0:DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11)MA:DDR3-1866 (933MHz @ CL=13, tRCD=13, tRP=13)NB:DDR3-2133 (1066MHz @ CL=14, tRCD=14, tRP=14)- 3 -

Product Guide2.1 SDRAMDensity128Mb O-dieBank4BanksPart NumberK4S280832OK4S281632OK4S560432N256Mb N-die4BanksK4S560832NK4S561632N Package & Power,

Temp.

(-C/-L) & Speed

LC(L)75LC(L)50/C(L)60/C(L)75LC(L)75LC(L)75LC(L)60/C(L)75Org.16M x 88M x 1664M x 432M x 816M x 16LVTTL8K/64msInterfaceLVTTLRefresh4K/64msJan. 2011Consumer Memory2. Commercial Temperature Consumer DRAM Component Product GuidePower (V)3.3±0.3VPackage54pin TSOP(II)3.3±0.3V54pin TSOP(II)Now2.2 DDR SDRAMDensity64Mb Q-die128Mb O-dieBank4Banks4BanksPart NumberK4H641638QK4H281638OK4H560438N256Mb N-die4BanksK4H560838NK4H561638NK4H510438J Package & Power,

Temp.

(-C/-L) & Speed

LC(L)CCLC(L)CC/C(L)B3LC(L)B3/C(L)B0LC(L)CC/C(L)B3LC(L)CC/C(L)B3LC(L)B3/C(L)B0BC(L)CC/C(L)B3LC(L)CC/C(L)B3BC(L)CC/C(L)B3LC(L)CC/C(L)B3BC(L)CC/C(L)B3Org.4M x 168M x 16 64M x 4 32M x 8 16M x 16128M x 42.5±0.2V*166pinTSOPII60ball FBGASSTL_28K/64m66pinTSOPII60ball FBGA66pinTSOPII60ball FBGANowSSTL_28K/64m2.5±0.2V*166pinTSOPIINowInterfaceSSTL_2SSTL_2Refresh4K/64m4K/64mPower (V)2.5±0.2V2.5±0.2V*512Mb J-die4BanksK4H510838J 64M x 8K4H511638JNOTE : 1 . VDD/VDDQ SPEC for 256/512Mb DDRDDR400VDD/VDDQ2.6V ± 0.1V 32M x 16DDR333/2662.5V ± 0.2V- 4 -

Product Guide2.3 DDR2 SDRAMDensity128Mb O-die256Mb N-dieBanks4Banks4BanksPart NumberK4T28163QOK4T56163QNK4T51043QI512Mb I-die4BanksK4T51083QIK4T51163QI1Gb E-die8BanksK4T1G084QEK4T1G164QEK4T1G084QFK4T1G164QF Package & Power,

Temp.

(-C/-L) & Speed

HCF8/E7/F7/E6HCF8/E7/F7/E6HC(L)E7/F7/E6HC(L)E7/F7/E6HC(L)F8/E7/F7/E6HC(L)F8/E7/F7/E6HC(L)F8/E7/F7/E6BC(L)F8/E7/F7/E6BC(L)F8/E7/F7/E6Org.8M x 1616M x 16128M x 464M x 832M x 16128M x 864M x 16128M x 864M x 16SSTL_188K/64mSSTL_188K/64mInterfaceSSTL_18SSTL_18Refresh4K/64m8K/64mJan. 2011Consumer MemoryPower (V)1.8V±0.1V1.8V±0.1VPackage84ball FBGA84ball FBGA60ball FBGA84ball FBGA1.8V±0.1V60ball FBGA84ball FBGA60ball FBGA84ball 1.8V±0.1VNow1Gb F-die8BanksSSTL_188K/64m1.8V±0.1VNow2.4 DDR3 SDRAMDensity1Gb E-dieBanks8BanksPart NumberK4B1G0846EK4B1G1646EK4B1G0846GK4B1G1646GK4B2G0846BK4B2G1646BK4B2G0846CK4B2G1646C Package & Power,

Temp.

(-C/-L) & Speed

HC(L)F7/F8/H9/K0 HC(L)F7/F8/H9/K0 BC(L)F8/H9/K0/MA/NB1 BC(L)F8/H9/K0/MA/NB HC(L)F7/F8/H9/K0 HC(L)F7/F8/H9/K0 HC(L)F8/H9/K0/MA/NB1 HC(L)F8/H9/K0/MA/NBOrg.128M x 864M x 16128M x 864M x 16256M x 8128M x 16256M x 8128M x 16InterfaceSSTL_15Refresh8K/64mPower (V)1.5V±0.075VPKG78ball FBGA96ball FBGA78ball FBGA96ball FBGA78ball FBGA96ball FBGA78ball FBGA96ball 1Gb G-die8BanksSSTL_158K/64m1.5V±0.075VNow2Gb B-die8BanksSSTL_158K/64m1.5V±0.075VNow2Gb C-die8BanksSSTL_158K/64m1.5V±0.075VNowNOTE : 1. DDR3 x8 1866/2133Mbps are ES now2.5 DDR3+ SDRAMDensity1Gb E-die1Gb G-die2Gb C-dieBanks8Banks8Banks8BanksPart NumberK4B1G1646EK4B1G1646GK4B2G1646C Package & Power,

Temp.

(-C/-L) & Speed

HQH9 BQH9 HQH9Org.64M x 1664M x 16128M x 16InterfaceSSTL_15SSTL_15SSTL_15Refresh8K/64m8K/64m8K/64mPower (V)1.5V±0.075V1.5V±0.075V1.5V±0.075VPKG96ball FBGA96ball FBGA96ball NowNOTE : For more details about product specifications or technical files, please contact us "semiconductor@"- 5 -

Product Guide3.1 SDRAMDensity128Mb O-die256Mb N-dieBank4Banks4BanksPart NumberK4S281632OK4S561632NPackage & Power,

Temp. & Speed

LI(P)60/I(P)75LI(P)60/I(P)75Org.8M x 1616M x 16InterfaceLVTTLLVTTLRefresh4K/64ms8K/64msJan. 2011Consumer Memory3. Industrial Temperature Consumer DRAM Component Product GuidePower (V)3.3±0.3V3.3±0.3VPackage54pin TSOP(II)54pin TSOP(II)3.2 DDR SDRAMDensity512Mb J-dieBank4BanksPart NumberK4H511638J Package & Power,

Temp. & Speed

LI(P)CC/B3BI(P)CC/B3Org.32M x 16InterfaceSSTL_2Refresh8K/64mPower (V)2.5±0.2V*1Package66pinTSOPII60ball E : 1. VDD/VDDQ SPEC for 256/512Mb DDRDDR400VDD/VDDQ2.6V ± 0.1VDDR333/2662.5V ± 0.2V3.3 DDR2 SDRAMDensity512Mb I-dieBank4BanksPart NumberK4T51163QIK4T51163QIK4T1G084QEK4T1G164QEK4T1G084QFK4T1G164QF Package & Power,

Temp. & Speed

HI(P)E7/I(P)F7/I(P)E6HDE7/E6HI(P)F7/I(P)E6HI(P)F7/I(P)E6BI(P)F7/I(P)E6BI(P)F7/I(P)E6Org.32M x 16128M x 864M x 16128M x 864M x 16InterfaceSSTL_18Refresh8K/64mPower (V)1.8V±0.1VPackage84ball FBGA60ball FBGA84ball FBGA60ball FBGA84ball 1Gb E-die8BanksSSTL_188K/64m1.8V ± 0.1VNow1Gb F-die8BanksSSTL_188K/64m1.8V ± 0.1VNow3.4 DDR3 SDRAMDensity1Gb E-die1Gb G-die2Gb B-die2Gb C-dieBank8Banks8Banks8Banks8BanksPart NumberK4B1G1646EK4B1G1646GK4B2G1646BK4B2G1646C Package & Power,

Temp. & Speed

HI(P)H9BI(P)H9HI(P)H9HI(P)H9Org.64M x 1664M x 16128M x 16128M x 16InterfaceSSTL_15SSTL_15SSTL_15SSTL_15Refresh8K/64m8K/64m8K/64m8K/64mPower (V)1.5V±0.075V1.5V±0.075V1.5V±0.075V1.5V±0.075VPackage96ball FBGA96ball FBGA96ball FBGA96ball NowNow- 6 -

Product Guide4. Package Dimension54Pin TSOP(II) (for SDRAM)Jan. 2011Consumer MemoryUnits : Millimeters(0.80)(0.50)(10°)(10°)0.125- 0.035+0.075#54#2810.16

0.10(1.50)(0.80)0.665

0.050.210

0.051.00

0.10(R

0.15)(10°)1.20

MAX22.22

0.10(0.50)#1(1.50)#2711.76

0.20(10.76)0.05

MIN(R

0.15)(0.71)0.80TYP[0.80

± 0.08]0.35- 0.05+0.100.075 MAX

0.25)(R(R

0.25)NOTE1. ( ) IS REFERENCE2. [ ] IS ASS’Y OUT QUALITY66Pin TSOP(II) (for DDR)Units : Millimeters#66#34(0.80)(0.50)10.16

0.10(1.50)(0.80)0.665

0.050.210

0.051.00

0.1022.22

0.10(R

0.15)0.125- 0.0351.20

MAX+0.075(10°)(0.50)#1(1.50)#33(10°)(10°)11.76

0.20(10.76)(R

0.15)0.05

MIN(0.71)0.65TYP[0.65

± 0.08]0.075 MAX(R

0.25)(R

0.25)Detail ADetail BNOTE1. ( ) IS REFERENCE2. [ ] IS ASS’Y OUT QUALITYDetail A0.25± 0.08Detail B(0° ∼ 8°)0.30± 0.08- 7 -[(10°)[(4°)0.10 MAX0.45

0.750.25TYP[(10°)[(4°)0.10 MAX(0° ∼ 8°)0.45

0.750.25TYP

Product Guide60Ball FBGA (For DDR 512Mb J-die)Jan. 2011Consumer MemoryUnits : Millimeters9.00 ± 0.100.80x8 =6.40A9.00 ± 0.101.00MAX0.80x4 =3.20MOLDING AREA90.80x2=1.60876540.80321#A1 MARK(option)BA#A1(Datum B)B1.005.50CD12.00

0.10EFG0.50HJKLM0.37±0.051.10±0.1060-∅0.48 Solder Ball

(Post refo 0.50±0.05(0.30)(0.60)4-CORNER MARK(option)(Datum A)0.50Top view0.20MAB Bottom view60Ball FBGA (For DDR2 512Mb I-die/1Gb E-die x8)Units : Millimeters# A1 INDEX MARK0.10MAX7.50 ±

0.10#A1(Datum A)9(Datum B)ABCDMOLDING AREA7.50 ±

0.100.80 x 8 = 6.400.801.60AB876543210.80

8.009.50

0.10EF0.50

0.05

HJKL0.35±0.05

1.10±0.10

(0.95)60-∅0.45 Solder ball(Post reflow 0.50 ± 0.05)

0.2MAB(1.90)TOP VIEW BOTTOM VIEW- 8 -0.80G9.50

0.101.00x11=11.0012.00

0.10

Product Guide0.10MAXJan. 2011Consumer MemoryUnits : Millimeters84Ball FBGA (For DDR2 128Mb O-die/256Mb N-die/512Mb I-die/1Gb E-die x16)7.50 ±

0.100.80 x 8 = 6.40MOLDING AREA3.200.809(Datum A)ABA# A1 INDEX MARKB3217.50 ±

0.10#A11.6065487(Datum B)CDE0.80

11.205.600.2MAB12.50

0.10FGH0.50±0.05

JKLMNPR0.35±0.05

1.10±0.10(0.95)(1.90)84-∅0.45 Solder ball(Post reflow 0.50 ± 0.05)

TOP VIEW BOTTOM VIEW60Ball FBGA (for DDR2 1Gb F-die x8)Units : Millimeters0.10MAX7.50 ± 0.100.80 x 8 = 6. 40(Datum A)0.80A# A1 INDEX MARKB3217.50 ± 0.10#A13.200.809A87651.604(Datum B)CD9.50

0.10EFHJKL0.37±0.05

1.10±0.10(0.30)60-∅0.48 Solder ball(Post reflow 0.50 ± 0.05)

0.2MAB0.80B0.80

8.000.80GMOLDING AREA(0.60)TOP VIEWBOTTOM VIEW- 9 -4.009.50

0.1012.50

0.10

Product Guide84Ball FBGA (for DDR2 1Gb F-die x16)0.10MAXJan. 2011Consumer MemoryUnits : Millimeters7.50 ± 0.100.80 x 8 = 6. 403.200.80(Datum A)A# A1 INDEX MARKB3217.50 ± 0.10#A11.606549ABCDEFGHKLMNPRJ87(Datum B)0.800.80

11.205.6012.50

0.100.37±0.05

1.10±0.10(0.30)MOLDING AREA84-∅0.48 Solder ball(Post reflow 0.50 ± 0.05)

0.2MAB(0.60)TOP VIEWBOTTOM VIEW78Ball FBGA (for DDR3 1Gb E-die x8 / DDR3 2Gb C-die x8)Units : Millimeters0.10MAX7.50 ± 0.10

0.80A#A1 INDEX MARKB(Datum A)0.80#A1

7.50 ± 0.10

1.603.2ABCDEFGHJKLMN(0.95)MOLDING AREA(1.90)4.80(Datum B)11.00

0.10

0.80

9.600.800.35 ± 0.051.10 ± 0.1078 - ∅0.45 Solder ball(Post Reflow ∅0.50 ± 0.05)0.2MABTOP VIEWBOTTOM VIEW- 10 -0.8011.00

0.10

12.50

0.10

Product Guide0.10MAXJan. 2011Consumer MemoryUnits : Millimeters96all FBGA (for DDR3 1Gb E-die x16 / DDR3+ 1Gb E-die x16 / DDR3 2Gb C-die x16)7.50 ± 0.10

A#A1 INDEX MARK#A1

7.50 ± 0.10

0.801.603.20B987654321(Datum A)ABCDEFGHJKLMNPRT(0.95)MOLDING AREA(1.90)(Datum B)13.30

0.10

6.000.80

12.00A#A1 INDEX MARKB4.800.80

9.600.35 ± 0.051.10 ± 0.1096 - ∅0.45 Solder ball(Post Reflow ∅0.50 ± 0.05)0.2MABTOP VIEWBOTTOM VIEW78Ball FBGA (for DDR3 2Gb B-die x8)Units : Millimeters0.10MAX9.00 ± 0.10

0.80 x 8 = 6.40(Datum A)0.801.603.20#A1

9.00 ± 0.10

987654321ABCDEFGHJKLMN(0.95)MOLDING AREA(1.90)(Datum B)11.50

0.10

0.800.800.35 ± 0.051.10 ± 0.1078 - ∅0.45 Solder ball(Post Reflow ∅0.50 ± 0.05)0.2MABTOP VIEWBOTTOM VIEW- 11 -0.8011.50

0.10

13.30

0.10

0.40

Product Guide78Ball FBGA (for DDR3 2Gb B-die x16)0.10MAXJan. 2011Consumer MemoryUnits : Millimeters9.00 ± 0.10

0.80 x 8 = 6.40#A1 INDEX MARK0.801.603.20BA#A1

9.00 ± 0.10

987654321(Datum A)ABCDEFGHJKLMNPRT(0.95)MOLDING AREA(1.90)(Datum B)13.30

0.10

6.000.80

12.000.80

9.6011.00

0.10

0.35 ± 0.051.10 ± 0.1096 - ∅0.45 Solder ball(Post Reflow ∅0.50 ± 0.05)0.2MABTOP VIEWBOTTOM VIEW78Ball FBGA Flip chip (for DDR3 1Gb G-die x8)Units : Millimeters0.10MAX7.50 ± 0.10

A#A1 INDEX MARKB(Datum A)0.80#A1

7.50 ± 0.10

1.603.2ABCDEFGHJKLMN(0.30)MOLDING AREA(0.60)11.00

0.10

0.37 ± 0.051.10 ± 0.1078 - ∅0.48 Solder ball(Post Reflow ∅0.50 ± 0.05)0.2MABTOP VIEWBOTTOM VIEW- 12 -0.800.804.80(Datum B)0.8013.30

0.10

0.40

Product Guide96Ball FBGA Flip chip (for DDR3 1Gb G-die x16)0.10MAXJan. 2011Consumer MemoryUnits : Millimeters7.50 ± 0.10

0.80 x 8 = 6.40

#A1 INDEX MARK0.801.603.20BA#A1

7.50 ± 0.1(Datum A)ABCDEFGHJKLMNPRT(Datum B)13.30

0.106.000.80

12.000.400.37 ± 0.051.10 ± 0.1096 - ∅0.48 Solder ball(Post Reflow ∅0.50 ± 0.05)0.2MAB(0.60)(0.30)MOLDING AREATOP VIEWBOTTOM VIEW- 13 -0.8013.30

0.10

Product GuideFor further information,semiconductor@- 14 -Jan. 2011Consumer Memory