2024年5月18日发(作者：漆雕睿哲)
QSH29
Transistors
Dual digital transistors
QSH29
zFeatures
In addition to the standard features of digital transistor,
this transisitor has:
1) Low collector saturation voltage, typically
V
CE (sat)
=100mV for I
C
/ I
B
=100mA / 1mA(Typ.)
2) High current gain, minimum
h
FE
=500mA for V
CE
=5V, I
C
=200mA.
3) Built in Zener diode for protection against surges when
connected to inductive load.
zStructure
NPN silicon epitaxial planar transistor
zApplications
Driver
zPackaging specifications and h
FE
Package
Type
Packaging type
Code
Basic ordering unit (pieces)
QSH29
TSMT6
Taping
TR
3000
DTr1
Di
DTr2
Di
R
(1) : Emitter (DTr1)
(2) : Base (DTr1)
(3) : Collector (DTr2)
(4) : Emitter (DTr2)
(5) : Base (DTr2)
(6) : Collector (DTr1)
zDimensions (Unit : mm)
TSMT6
Abbreviated symbol : H29
zEquivalent circuit
(6)(5)
R
(4)
R=10kΩ
zAbsolute maximum ratings (Ta=25°C)
(1)(2)(3)
<<
DTr1
>> <<
DTr2
>>
ParameterSymbol
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
V
EBO
Emitter-base voltage
Continuous
I
C
Collector current
Pulsed
I
CP
Power dissipation
Junction temperature
Range of storage temperature
P
D
Tj
Tstg
Unit
Limits
V
60±10
V
60±10
5V
500mA
∗1
1A
1.25W/TOTAL
∗2
0.9W/1 ELEMENT
∗2
150
°C
−55 to +150°C
∗1 Pw=10ms 1 Pulse
∗2 Each terminal mounted on a ceramic board
1/3
/
QSH29
Transistor
zElectrical characteristics (Ta=25°C)
<<
DTr1
>> <<
DTr2
>>
nditions
Collector-emitter breakdown voltage
BV
CEO
50
−
70V
I
C
=50µA
BV
CBO
Collector-base breakdown voltage
50
−
70V
I
C
=50µA
BV
EBO
5.0
Emitter-base breakdown voltage
−
−V
I
E
=720µA
I
CBO
Collector cut-off current
−−
0.5µA
V
CB
=40V
I
EBO
Emitter cut-off current
300−
580µA
V
EB
=4V
100
300mV
I
C
=100mA, I
B
=1mA
Collector-emitter saturation voltage
V
CE (sat)
−
h
FE
V
CE
=5V, I
C
=200mA
DC current gain500
−
−−
−
R
Emitter-base resistance7
10
13kΩ
2/3
/
2024年5月18日发(作者：漆雕睿哲)
QSH29
Transistors
Dual digital transistors
QSH29
zFeatures
In addition to the standard features of digital transistor,
this transisitor has:
1) Low collector saturation voltage, typically
V
CE (sat)
=100mV for I
C
/ I
B
=100mA / 1mA(Typ.)
2) High current gain, minimum
h
FE
=500mA for V
CE
=5V, I
C
=200mA.
3) Built in Zener diode for protection against surges when
connected to inductive load.
zStructure
NPN silicon epitaxial planar transistor
zApplications
Driver
zPackaging specifications and h
FE
Package
Type
Packaging type
Code
Basic ordering unit (pieces)
QSH29
TSMT6
Taping
TR
3000
DTr1
Di
DTr2
Di
R
(1) : Emitter (DTr1)
(2) : Base (DTr1)
(3) : Collector (DTr2)
(4) : Emitter (DTr2)
(5) : Base (DTr2)
(6) : Collector (DTr1)
zDimensions (Unit : mm)
TSMT6
Abbreviated symbol : H29
zEquivalent circuit
(6)(5)
R
(4)
R=10kΩ
zAbsolute maximum ratings (Ta=25°C)
(1)(2)(3)
<<
DTr1
>> <<
DTr2
>>
ParameterSymbol
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
V
EBO
Emitter-base voltage
Continuous
I
C
Collector current
Pulsed
I
CP
Power dissipation
Junction temperature
Range of storage temperature
P
D
Tj
Tstg
Unit
Limits
V
60±10
V
60±10
5V
500mA
∗1
1A
1.25W/TOTAL
∗2
0.9W/1 ELEMENT
∗2
150
°C
−55 to +150°C
∗1 Pw=10ms 1 Pulse
∗2 Each terminal mounted on a ceramic board
1/3
/
QSH29
Transistor
zElectrical characteristics (Ta=25°C)
<<
DTr1
>> <<
DTr2
>>
nditions
Collector-emitter breakdown voltage
BV
CEO
50
−
70V
I
C
=50µA
BV
CBO
Collector-base breakdown voltage
50
−
70V
I
C
=50µA
BV
EBO
5.0
Emitter-base breakdown voltage
−
−V
I
E
=720µA
I
CBO
Collector cut-off current
−−
0.5µA
V
CB
=40V
I
EBO
Emitter cut-off current
300−
580µA
V
EB
=4V
100
300mV
I
C
=100mA, I
B
=1mA
Collector-emitter saturation voltage
V
CE (sat)
−
h
FE
V
CE
=5V, I
C
=200mA
DC current gain500
−
−−
−
R
Emitter-base resistance7
10
13kΩ
2/3
/