2024年5月27日发(作者：本方雅)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-563 Plastic-Encapsulate Transistors

SOT-563

NST3946

General purpose transistors (dual transistors)

DESCRIPTION

It is designed for general purpose amplifier applications . By putting two

Discrete devices in one package , this device is ideal for low – power surface

mount applications where board space is at a premium.

1

FEATURES

z Low V

CE(sat)

z Simplifies Circuit Design

z Reduces Board Space

z Reduces Component Count

Marking: 46

Equivalent circuit

A,Dec,2010

PNP 3906 Absolute maximum ratings (T

a

=25℃)

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-40

-40

-5

-200

150

833

150

-55~+150

V

V

V

mA

mW

℃/W

℃

℃

I

C

Collector Current

P

C

R

θJA

Collector Power Dissipation

=

=

Thermal Resistance from Junction to Ambient

=

T

J

Junction Temperature

=

T

stg

Storage Temperature

=

=

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

=

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

=

Test conditions

=

Min Typ Max Unit

=

V

V

(BR)CBO

I

C

=-10μA, I

E

0 -40

=

V

V

(BR)CEO

I

C

=-1mA, I

B

0 -40

=

=

V

V

(BR)EBO

I

E

=-10μA, I

C

0 -5

=

V

CB

=-30V, I

E

0 -0.05 μA

I

CBO

I

EBO

V

EB

=-5V, I

C

0 -0.05μA

V

CE

=-1V, I

C

-0.1mA

V

CE

=-1V, I

C

-1mA

60

80

100 300

60

30

DC current gain

h

FE

V

CE

=-1V, I

C

-10mA

V

CE

=-1V, I

C

-50mA

V

CE

=-1V, I

C

-100mA

I

C

=-10mA, I

B

-1mA -0.25V

Collector-emitter saturation voltage

V

CE(sat)

I

C

=-50mA, I

B

-5mA -0.4 V

I

C

=-10mA, I

B

-1mA -0.6 5 -0.85V

Base-emitter saturation voltage

V

BE(sat)

I

C

=-50mA, I

B

-5mA -0.95V

Transition frequency

Output capacitance

f

T

C

ob

V

CE

=-20V, I

C

=-10mA, f=100MHz

V

CB

=-5V, I

E

=0, f=1MHz

250

4.5

MHz

pF

A,Dec,2010

NPN 3904 Absolute maximum ratings (T

a

=25℃)

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

60

40

5

200

150

833

150

-55~+150

V

V

V

mA

mW

℃/W

℃

℃

I

C

Collector Current

P

C

R

θJA

Collector Power Dissipation

=

=

Thermal Resistance from Junction to Ambient

=

T

J

Junction Temperature

=

T

stg

Storage Temperature

=

=

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

=

Parameter Symbol

=

Test conditions

=

Min Typ Max Unit

V

V

(BR)CBO

I

C

=10μA, I

E

0 60

Collector-base breakdown voltage

=

=

V

V

(BR)CEO

I

C

=1mA, I

B

0 40

Collector-emitter breakdown voltage

=

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

=

V

V

(BR)EBO

I

E

=10μA, I

C

0 5

=

V

CB

=30V, I

E

0 0.05 μA

I

CBO

I

EBO

V

EB

=5V, I

C

0 0.05 μA

V

CE

=1V, I

C

0.1mA

V

CE

=1V, I

C

1mA

40

70

100 300

60

30

DC current gain

h

FE

V

CE

=1V, I

C

10mA

V

CE

=-1V, I

C

50mA

V

CE

=-1V, I

C

100mA

I

C

=10mA, I

B

1mA 0.2 V

Collector-emitter saturation voltage

V

CE(sat)

I

C

=50mA, I

B

5mA 0.3 V

I

C

=10mA, I

B

1mA 0.65 0.85 V

Base-emitter saturation voltage

V

BE(sat)

I

C

=50mA, I

B

5mA 0.95 V

Transition frequency

Output capacitance

f

T

C

ob

V

CE

=20V, I

C

=20mA, f=100MHz

V

CB

=5V, I

E

=0, f=1MHz

300

4

MHz

pF

A,Dec,2010

2024年5月27日发(作者：本方雅)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-563 Plastic-Encapsulate Transistors

SOT-563

NST3946

General purpose transistors (dual transistors)

DESCRIPTION

It is designed for general purpose amplifier applications . By putting two

Discrete devices in one package , this device is ideal for low – power surface

mount applications where board space is at a premium.

1

FEATURES

z Low V

CE(sat)

z Simplifies Circuit Design

z Reduces Board Space

z Reduces Component Count

Marking: 46

Equivalent circuit

A,Dec,2010

PNP 3906 Absolute maximum ratings (T

a

=25℃)

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-40

-40

-5

-200

150

833

150

-55~+150

V

V

V

mA

mW

℃/W

℃

℃

I

C

Collector Current

P

C

R

θJA

Collector Power Dissipation

=

=

Thermal Resistance from Junction to Ambient

=

T

J

Junction Temperature

=

T

stg

Storage Temperature

=

=

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

=

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

=

Test conditions

=

Min Typ Max Unit

=

V

V

(BR)CBO

I

C

=-10μA, I

E

0 -40

=

V

V

(BR)CEO

I

C

=-1mA, I

B

0 -40

=

=

V

V

(BR)EBO

I

E

=-10μA, I

C

0 -5

=

V

CB

=-30V, I

E

0 -0.05 μA

I

CBO

I

EBO

V

EB

=-5V, I

C

0 -0.05μA

V

CE

=-1V, I

C

-0.1mA

V

CE

=-1V, I

C

-1mA

60

80

100 300

60

30

DC current gain

h

FE

V

CE

=-1V, I

C

-10mA

V

CE

=-1V, I

C

-50mA

V

CE

=-1V, I

C

-100mA

I

C

=-10mA, I

B

-1mA -0.25V

Collector-emitter saturation voltage

V

CE(sat)

I

C

=-50mA, I

B

-5mA -0.4 V

I

C

=-10mA, I

B

-1mA -0.6 5 -0.85V

Base-emitter saturation voltage

V

BE(sat)

I

C

=-50mA, I

B

-5mA -0.95V

Transition frequency

Output capacitance

f

T

C

ob

V

CE

=-20V, I

C

=-10mA, f=100MHz

V

CB

=-5V, I

E

=0, f=1MHz

250

4.5

MHz

pF

A,Dec,2010

NPN 3904 Absolute maximum ratings (T

a

=25℃)

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

60

40

5

200

150

833

150

-55~+150

V

V

V

mA

mW

℃/W

℃

℃

I

C

Collector Current

P

C

R

θJA

Collector Power Dissipation

=

=

Thermal Resistance from Junction to Ambient

=

T

J

Junction Temperature

=

T

stg

Storage Temperature

=

=

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

=

Parameter Symbol

=

Test conditions

=

Min Typ Max Unit

V

V

(BR)CBO

I

C

=10μA, I

E

0 60

Collector-base breakdown voltage

=

=

V

V

(BR)CEO

I

C

=1mA, I

B

0 40

Collector-emitter breakdown voltage

=

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

=

V

V

(BR)EBO

I

E

=10μA, I

C

0 5

=

V

CB

=30V, I

E

0 0.05 μA

I

CBO

I

EBO

V

EB

=5V, I

C

0 0.05 μA

V

CE

=1V, I

C

0.1mA

V

CE

=1V, I

C

1mA

40

70

100 300

60

30

DC current gain

h

FE

V

CE

=1V, I

C

10mA

V

CE

=-1V, I

C

50mA

V

CE

=-1V, I

C

100mA

I

C

=10mA, I

B

1mA 0.2 V

Collector-emitter saturation voltage

V

CE(sat)

I

C

=50mA, I

B

5mA 0.3 V

I

C

=10mA, I

B

1mA 0.65 0.85 V

Base-emitter saturation voltage

V

BE(sat)

I

C

=50mA, I

B

5mA 0.95 V

Transition frequency

Output capacitance

f

T

C

ob

V

CE

=20V, I

C

=20mA, f=100MHz

V

CB

=5V, I

E

=0, f=1MHz

300

4

MHz

pF

A,Dec,2010