2024年9月2日发(作者：王羡)
【
南京南山半导体有限公司 — 长电三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
(NPN)
BC846AW, BW
TRANSISTOR
SOT-323 Plastic-Encapsulate Transistors
SOT-323
BC847AW, BW, CW
BC848AW, BW, CW
FEATURES
Ideally suited for automatic insertion
z
For Switching and AF Amplifier Applications
z
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol Parameter
V
CBO
Collector-Base Voltage BC846W
BC847W
BC848W
V
CEO
Collector-Emitter Voltage BC846W
BC847W
BC848W
V
EBO
Emitter-Base Voltage BC846W
BC847W
BC848W
I
C
P
C
T
J
T
stg
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
1. BASE
2. EMITTER
3. COLLECTOR
Value Unit
80
50
30
65
45
30
6
6
5
0.1
150
150
-55-150
A
mW
℃
℃
V
V
V
DEVICE MARKING
BC846AW=1A; BC846BW=1B;
BC847AW=1E; BC847BW=1F; BC847CW=1G;
BC848AW=1J; BC848BW=1K: BC848CW=1L
B,Nov,2012
【
南京南山半导体有限公司 — 长电三极管选型资料
】
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage BC846W
BC847W
BC848W
Collector-emitter breakdown voltage BC846W
BC847W
BC848W
Emitter-base breakdown voltage BC846W
BC847W
BC848W
Collector Cutoff Current
DC current gain BC846AW,847AW,848AW
BC846BW,847BW,848BW
BC847CW,BC848CW
BC846AW,847AW,848AW
BC846BW,847BW,848BW
BC847CW,BC848CW
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure BC846AW,847AW,848AW
BC846BW,847BW,848BW
BC847CW,BC848CW
NF
V
CE(sat)
I
C
=10mA, I
B
=0. 5mA
I
C
=100mA, I
B
= 5mA
h
FE
5V, I
C
= 10µA V
CE
=
5V, I
C
= 2mA
V
CE
=
V
EBO
I
E
= 1 µA, I
C
=0
V
CEO
I
C
= 10mA, I
B
=0
V
CBO
I
C
= 10µA, I
E
=0
SymbolTest conditions Min Typ Max Unit
80
50
30
65
45
30
6
6
V
V
V
5
==
I
CBO
V
CB
30V 15 nA
110
200
420
580
100
90
150
270
220
450
800
0.25
0.6
0.7
0.9
660
V
I
C
=10mA, I
B
=0. 5mA
=
V
BE(sat)
I
C
=100mA, I
B
= 5mA
V
BE(on)
f
T
C
ob
5V, I
C
= 2mA
V
CE
=
V
CE
= 5V, I
C
= 10mA
V
CE
= 5 V, I
C
= 10mA
f=100MHz
V
CE
=5V,I
c
=0.2mA,
f=1KHz,R
S
=2KΩ
BW=200Hz
V
700
770
mV
MHz
V
CB
10V,f1MHz 4.5 pF
10
4
dB
B,Nov,2012
Typical Characteristics
BC847W
Static Characteristic
10
COMMON
EMITTER
T
)
a
=25
℃
A
8
m
(
20uA
C
I
18uA
T
N
6
16uA
E
R
14uA
R
U
C
12uA
R
4
O
10uA
T
C
E
8uA
L
L
O
2
6uA
C
4uA
I
B
=2uA
0
01234567
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V ——
I
1000
BEsat
C
β=20
N
O
800
I
)
T
V
T
A
R
m
a
=25
℃
(
U
T
t
A
a
s
E
S
B
R
V
600
E
T
E
T
I
G
M
A
T
℃
E
T
a
=100
-
L
E
O
S
V
A
400
B
200
0.1110100
COLLECTOR CURREMT I
C
(mA)
I
C
——
V
BE
100
COMMON EMITTER
V
CE
=5V
)
A
m
(
C
I
10
℃
0
T
0
N
1
=
℃
E
a
5
R
T
2
R
=
a
U
T
C
R
O
T
1
C
E
L
L
O
C
0.1
2
BASE-EMMITER VOLTAGE V
BE
(mV)
C
100
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
)
F
C
p
ib
(
10
C
E
C
N
A
C
T
ob
I
C
A
P
1
A
C
0.1
0.1110
30
REVERSE VOLTAGE V (V)
h
FE
——
I
3000
C
COMMON EMITTER
V
CE
= 5V
1000
T
a
=100
℃
E
F
h
N
I
A
G
T
T
N
a
=25
℃
E
R
R
U
100
C
C
D
10
110100
COLLECTOR CURRENT I
C
(mA)
V
CEsat
——
I
C
500
β=20
N
O
I
T
A
R
)
U
V
T
m
A
(
T
S
a
=100
℃
t
R
a
s
E
E
100
C
T
V
T
I
M
E
E
T
-
G
a
=25
℃
R
A
O
T
T
L
C
O
E
V
L
L
O
C
10
0.1110100
COLLECTOR CURREMT I
C
(mA)
f
500
T
——
I
C
)
z
H
M
(
T
f
Y
C
N
100
E
U
Q
E
R
F
N
O
I
T
I
S
N
A
R
COMMON EMITTER
T
V
CE
=5V
T
a
=25
℃
10
0.25
24681012
COLLECTOR CURRENT I
C
(mA)
P
200
C
—— T
a
N
O
I
T
A
150
P
I
S
S
I
D
)
R
W
E
W
m
(
O
100
P
C
R
P
O
T
C
E
L
L
50
O
C
0
5150
AMBIENT TEMPERATURE T
a
(
℃
)
B,Nov,2012
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
.
0.9001.100
0.0000.100
0.9001.000
0.2000.400
0.0800.150
2.0002.200
1.1501.350
2.1502.450
0.650 TYP.
1.2001.400
0.525 REF.
0.2600.460
0°8°
Dimensions In Inches
.
0.0350.043
0.0000.004
0.0350.039
0.0080.016
0.0030.006
0.0790.087
0.0450.053
0.0850.096
0.026 TYP.
0.0470.055
0.021 REF.
0.0100.018
0°8°
The bottom gasket
Label on the Reel
3000×15 PCS 3000×1 PCS
The top gasket
Stamp “EMPTY”
on the empty box
Seal the box
with the tape
Seal the box
with the tape
QA Label
Label on the Inner Box
Inner Box:
210mm×208mm×２０３mm
Label on the Outer Box
Outer Box:
440mm×440mm×230mm
2024年9月2日发(作者：王羡)
【
南京南山半导体有限公司 — 长电三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
(NPN)
BC846AW, BW
TRANSISTOR
SOT-323 Plastic-Encapsulate Transistors
SOT-323
BC847AW, BW, CW
BC848AW, BW, CW
FEATURES
Ideally suited for automatic insertion
z
For Switching and AF Amplifier Applications
z
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol Parameter
V
CBO
Collector-Base Voltage BC846W
BC847W
BC848W
V
CEO
Collector-Emitter Voltage BC846W
BC847W
BC848W
V
EBO
Emitter-Base Voltage BC846W
BC847W
BC848W
I
C
P
C
T
J
T
stg
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
1. BASE
2. EMITTER
3. COLLECTOR
Value Unit
80
50
30
65
45
30
6
6
5
0.1
150
150
-55-150
A
mW
℃
℃
V
V
V
DEVICE MARKING
BC846AW=1A; BC846BW=1B;
BC847AW=1E; BC847BW=1F; BC847CW=1G;
BC848AW=1J; BC848BW=1K: BC848CW=1L
B,Nov,2012
【
南京南山半导体有限公司 — 长电三极管选型资料
】
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage BC846W
BC847W
BC848W
Collector-emitter breakdown voltage BC846W
BC847W
BC848W
Emitter-base breakdown voltage BC846W
BC847W
BC848W
Collector Cutoff Current
DC current gain BC846AW,847AW,848AW
BC846BW,847BW,848BW
BC847CW,BC848CW
BC846AW,847AW,848AW
BC846BW,847BW,848BW
BC847CW,BC848CW
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure BC846AW,847AW,848AW
BC846BW,847BW,848BW
BC847CW,BC848CW
NF
V
CE(sat)
I
C
=10mA, I
B
=0. 5mA
I
C
=100mA, I
B
= 5mA
h
FE
5V, I
C
= 10µA V
CE
=
5V, I
C
= 2mA
V
CE
=
V
EBO
I
E
= 1 µA, I
C
=0
V
CEO
I
C
= 10mA, I
B
=0
V
CBO
I
C
= 10µA, I
E
=0
SymbolTest conditions Min Typ Max Unit
80
50
30
65
45
30
6
6
V
V
V
5
==
I
CBO
V
CB
30V 15 nA
110
200
420
580
100
90
150
270
220
450
800
0.25
0.6
0.7
0.9
660
V
I
C
=10mA, I
B
=0. 5mA
=
V
BE(sat)
I
C
=100mA, I
B
= 5mA
V
BE(on)
f
T
C
ob
5V, I
C
= 2mA
V
CE
=
V
CE
= 5V, I
C
= 10mA
V
CE
= 5 V, I
C
= 10mA
f=100MHz
V
CE
=5V,I
c
=0.2mA,
f=1KHz,R
S
=2KΩ
BW=200Hz
V
700
770
mV
MHz
V
CB
10V,f1MHz 4.5 pF
10
4
dB
B,Nov,2012
Typical Characteristics
BC847W
Static Characteristic
10
COMMON
EMITTER
T
)
a
=25
℃
A
8
m
(
20uA
C
I
18uA
T
N
6
16uA
E
R
14uA
R
U
C
12uA
R
4
O
10uA
T
C
E
8uA
L
L
O
2
6uA
C
4uA
I
B
=2uA
0
01234567
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V ——
I
1000
BEsat
C
β=20
N
O
800
I
)
T
V
T
A
R
m
a
=25
℃
(
U
T
t
A
a
s
E
S
B
R
V
600
E
T
E
T
I
G
M
A
T
℃
E
T
a
=100
-
L
E
O
S
V
A
400
B
200
0.1110100
COLLECTOR CURREMT I
C
(mA)
I
C
——
V
BE
100
COMMON EMITTER
V
CE
=5V
)
A
m
(
C
I
10
℃
0
T
0
N
1
=
℃
E
a
5
R
T
2
R
=
a
U
T
C
R
O
T
1
C
E
L
L
O
C
0.1
2
BASE-EMMITER VOLTAGE V
BE
(mV)
C
100
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
)
F
C
p
ib
(
10
C
E
C
N
A
C
T
ob
I
C
A
P
1
A
C
0.1
0.1110
30
REVERSE VOLTAGE V (V)
h
FE
——
I
3000
C
COMMON EMITTER
V
CE
= 5V
1000
T
a
=100
℃
E
F
h
N
I
A
G
T
T
N
a
=25
℃
E
R
R
U
100
C
C
D
10
110100
COLLECTOR CURRENT I
C
(mA)
V
CEsat
——
I
C
500
β=20
N
O
I
T
A
R
)
U
V
T
m
A
(
T
S
a
=100
℃
t
R
a
s
E
E
100
C
T
V
T
I
M
E
E
T
-
G
a
=25
℃
R
A
O
T
T
L
C
O
E
V
L
L
O
C
10
0.1110100
COLLECTOR CURREMT I
C
(mA)
f
500
T
——
I
C
)
z
H
M
(
T
f
Y
C
N
100
E
U
Q
E
R
F
N
O
I
T
I
S
N
A
R
COMMON EMITTER
T
V
CE
=5V
T
a
=25
℃
10
0.25
24681012
COLLECTOR CURRENT I
C
(mA)
P
200
C
—— T
a
N
O
I
T
A
150
P
I
S
S
I
D
)
R
W
E
W
m
(
O
100
P
C
R
P
O
T
C
E
L
L
50
O
C
0
5150
AMBIENT TEMPERATURE T
a
(
℃
)
B,Nov,2012
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
.
0.9001.100
0.0000.100
0.9001.000
0.2000.400
0.0800.150
2.0002.200
1.1501.350
2.1502.450
0.650 TYP.
1.2001.400
0.525 REF.
0.2600.460
0°8°
Dimensions In Inches
.
0.0350.043
0.0000.004
0.0350.039
0.0080.016
0.0030.006
0.0790.087
0.0450.053
0.0850.096
0.026 TYP.
0.0470.055
0.021 REF.
0.0100.018
0°8°
The bottom gasket
Label on the Reel
3000×15 PCS 3000×1 PCS
The top gasket
Stamp “EMPTY”
on the empty box
Seal the box
with the tape
Seal the box
with the tape
QA Label
Label on the Inner Box
Inner Box:
210mm×208mm×２０３mm
Label on the Outer Box
Outer Box:
440mm×440mm×230mm