2024年11月2日发(作者：贸依心)
元器件交易网
MMBT6428LT1,
MMBT6429LT1
Amplifier Transistors
NPN Silicon
Features
COLLECTOR
3
1
BASE
•
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
6428LT1
50
60
6.0
200
6429LT1
45
55
Unit
Vdc
Vdc
Vdc
mAdc
1
2
3
2
EMITTER
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Value
225
1.8
R
q
JA
P
D
556
300
2.4
R
q
JA
T
J
, T
stg
417
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
M
xxx
1
xxx M
= Specific Device Code
MMBT6428LT1 − 1KM
MMBT6429LT1 − 1L
= Date Code
−5 = 1.0
2024年11月2日发(作者：贸依心)
元器件交易网
MMBT6428LT1,
MMBT6429LT1
Amplifier Transistors
NPN Silicon
Features
COLLECTOR
3
1
BASE
•
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
6428LT1
50
60
6.0
200
6429LT1
45
55
Unit
Vdc
Vdc
Vdc
mAdc
1
2
3
2
EMITTER
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Value
225
1.8
R
q
JA
P
D
556
300
2.4
R
q
JA
T
J
, T
stg
417
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
M
xxx
1
xxx M
= Specific Device Code
MMBT6428LT1 − 1KM
MMBT6429LT1 − 1L
= Date Code
−5 = 1.0